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Hengchang Bi
Tel:025- 83794642-8828
Fax:
Email: honesty1983@163.com
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Resume: |
- 2003. 9-2007.7 : B.E., electronic science and technology , shanxi university of science & technology, P. R. China.
- 2007.9-2009.7: postgraduate, VDMOS FET ( vertical double diffusion metal oxide silicon field effect transistor), microelectronics and solid electronics, Southeast University, Nanjing, P. R. China
- 2009.9- present: PhD Candidate, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, P. R. China
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| Research interests: |
- VDMOS FET ( vertical double diffusion metal oxide silicon field effect transistor)
- preparation and characterization of graphene
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| Selected Publications: |
1.Hengchang Bi, Kuibo Yin, Xiao Xie, Yilong Zhou, Neng Wan, Feng Xu, Florian Banhart, Litao Sun, and Rodney S. Ruoff, “Low temperature casting of graphene with high compressive strength�?Adv. Mater.
DOI: 10.1002/adma. 201201519 (accepted).
2. Hengchang Bi, Xiao Xie, Kuibo Yin, Yilong Zhou, Shu Wan, Longbing He, Feng Xu, Florian Banhart, Litao Sun, and Rodney S. Ruoff, Spongy graphene as a highly efficient and recyclable sorbent for oils and organic solvents. Adv. Funct. Mater.
DOI: 10.1002/adfm. 201200888 (accepted).
3. Hengchang Bi, Xiao Xie, Kuibo Yin, Shu Wan, Litao Sun, Actuators based on graphene/graphene oxide papers. IEEE-NEMS 2012 (oral).
4. H. C. Bi, K. B. Yin, X. H. Hu, and L. T. Sun, Synthesis of graphene based on the improved solvothermal reduction. IVESC 2010 and NANOcarbon2010, 634-635 (2010). (EI)
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